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PIN Photodiodes
PNZ300 (PN300), PNZ300F (PN300F)
Silicon planar type
For optical control systems Features
* Fast response which is well suited to high speed modulated light detection * Wide spectral sensitivity * Low dark current and low noise * Good photo current linearity and wide dynamic sensitivity * Narrow directivity (PNZ300) * Wide derectivity (PNZ300F)
PAZ300
6.30.3 4.60.15 Glass lens
Unit: mm
12.7 min.
2-0.450.05
2.540.25
1. 0
2 0.
3 45
1.
0
0. 15
2
1
5.75 max.
1: Anode 2: Cathode MTGLR102-001 Package
Glass window
Absolute Maximum Ratings Ta = 25C
Parameter Reverse voltage Power dissipation Operating ambient temperature Storage temperature Symbol VR PD Topr Tstg Rating 50 100 -25 to +85 -30 to +100 Unit V mW C C
PAZ300F
4.50.2
4.60.15
Unit: mm
12.7 min.
2-0.450.05
2.450.25
0 1.
.2 0
3 45
1. 0
0 .1 5
2
1
5.75 max.
Electrical-Optical Characteristics Ta = 25C 3C
Parameter Dark current Photocurrent *1 PNZ300 PNZ300F Peak emission wavelength Rise time
*2
1: Anode 2: Cathode MTGFR102-001 Package
Symbol ID IL p tr tf Ct PNZ300 PNZ300F VR = 10 V
Conditions VR = 10 V, L = 1 000 lx VR = 10 V VR = 20 V, RL = 50 VR = 10 V, f = 1 MHz The angle from which photocurrent becomes 50%
Min
Typ 0.1
Max 10
Unit nA A nm ns ns pF
30 5
55 7 800 1 1 7 10 40
Fall time *2 Terminal capacitance Half-power angle
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes. 2. Spectral sensitivity characteristics: Sensitivity for wave length over 400 nm maximum sensitivity ratio is 100%. 3. This device is designed be disregarded radiation. 4. *1: Source: Tungsten (color temperature 2 856 K) *2: Switching time measurement circuit
Sig. in P = 900 nm 50 RL VR (Input pulse) Sig. out (Output pulse) tr tf 90% 10% tr: Rise time tf: Fall time
Note) The part numbers in the parenthesis show conventional part number.
Publication date: April 2004 SHE00030BED
1
PNZ300F, PNZ300F
PD Ta
120
IL L
103 VR = 10 V Ta = 25C T = 2 856 K 102
ID V R
Ta = 25C
100
Power dissipation PD (mW)
102
80
10
Photocurrent IL (A)
10
40
1
PN Z3 00 F
60
Dark current ID (nA)
PN Z3 00
1
10-1
20
10-1
0 -20
0
20
40
60
80
100
10-2
1
10
102
103
104
10-2 10-1
1
10
102
Ambient temperature Ta (C)
Illuminance L (lx)
Reverse voltage VR (V)
I L VR
50 VR = 10 V, Ta = 25C, T = 2 856 K PNZ300 L = 1 000 lx PNZ300F 30 40
Ct VR
103 Ta = 25 C
100
IL T a
VR = 10 V 80
Terminal capacitance Ct (pF)
102
Photocurrent IL (A)
Photocurrent IL (A)
60 PNZ300 40
10
PNZ300 20 L = 500 lx PNZ300F
1
20
10 L = 100 lx 0 PNZ300 PNZ300F 0 10 20 30 40 50
10-1 -1 10
1
10
102
0 -40
0
40
80
Reverse voltage VR (V)
Reverse voltage VR (V)
Ambient temperature Ta (C)
ID T a
103 VR = 10 V
Spectral sensitivity characteristics
100 VCE = 10 V Ta = 25C 100
Directivity characteristics
102
10
Relative sensitivity S (%)
Relative sensitivity S (%)
80
80
Dark current ID (nA)
1
40
40
10-1
10-2
20
20
10-3 -40
0
40
80
0 200
400
600
800
1 000
1 200
0
80
40
PNZ300
0
60
60
PNZ300 F
40
80
Ambient temperature Ta (C)
Wavelength (nm)
Half-power angle ()
2
SHE00030BED
PNZ300, PNZ300F
fC R L
103 VR = 10 V Ta = 25C
102
Cutoff frequency fC (MHz)
10
1
10-1
10-2
10-3 10
102
103
104
105
106
107
Load resistance RL ()
SHE00030BED
3
Request for your special attention and precautions in using the technical information and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical information as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.
2003 SEP

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